APTCV50H60T3G APTCV50H60T3G C rev 1 october, 2012 www.microsemi.com 1-10 all ratings @ t j = 25c unless otherwise specified these devices are sensitiv e to electrostatic discharge. proper handing procedures should be followe d. see application note apt0502 on www.microsemi.com 8 7 10 q4 11 cr3 q3 14 19 q2 18 q1 13 3 4 ntc 16 32 31 cr1 23 22 2627 15 29 30 top switches : trench + field stop igbt3 bottom switches : coolmos? 1615 18 20 23 22 13 11 12 14 87 2930 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together 13/14 ; 15/16 ; 26/27 ; 31/32 trench & field stop igbt3 q1, q3: v ces = 600v ; i c = 50a @ tc = 80c coolmos? q2, q4: v ces = 600v ; i c = 49a @ tc = 25c application ? solar converter features ? q2, q4 coolmos? - ultra low r dson - low miller capacitance - ultra low gate charge - avalanche energy rated ? q1, q3 trench & field stop igbt3 - low voltage drop - switching frequency up to 20 khz - rbsoa & scsoa rated - low tail current ? kelvin emitter for easy drive ? very low stray inductance ? high level of integration ? internal thermistor for temperature monitoring benefits ? optimized conduction & switching losses ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? easy paralleling due to positive t c of v cesat ? rohs compliant full - bridge npt & trench + field stop igbt3 power module downloaded from: http:///
APTCV50H60T3G APTCV50H60T3G C rev 1 october, 2012 www.microsemi.com 2-10 1. top switches 1.1 top trench + field stop igbt3 characteristics absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 80 i c continuous collector current t c = 80c 50 i cm pulsed collector current t c = 25c 100 a v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 176 w rbsoa reverse bias safe operating area t j = 150c 100a @ 550v electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 250 a t j = 25c 1.5 1.9 v ce(sat) collector emitter saturation voltage v ge =15v i c = 50a t j = 150c 1.7 v v ge(th) gate threshold voltage v ge = v ce , i c = 600a 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 600 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 3150 c oes output capacitance 200 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 95 pf t d(on) turn-on delay time 110 t r rise time 45 t d(off) turn-off delay time 200 t f fall time inductive switching (25c) v ge = 15v v bus = 300v i c = 50a r g = 8.2 ? 40 ns t d(on) turn-on delay time 120 t r rise time 50 t d(off) turn-off delay time 250 t f fall time inductive switching (150c) v ge = 15v v bus = 300v i c = 50a r g = 8.2 ? 60 ns t j = 25c 0.3 e on turn-on switching energy t j = 150c 0.43 mj t j = 25c 1.35 e off turn-off switching energy v ge = 15v v bus = 300v i c = 50a r g = 8.2 ? t j = 150c 1.75 mj r thjc junction to case thermal resistance 0.85 c/w downloaded from: http:///
APTCV50H60T3G APTCV50H60T3G C rev 1 october, 2012 www.microsemi.com 3-10 1.2 top fast diode characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 25 i rm maximum reverse leakage current v r =600v t j = 125c 500 a i f dc forward current tc = 80c 30 a i f = 30a 1.8 2.3 i f = 60a 2.1 v f diode forward voltage i f = 30a t j = 125c 1.5 v t j = 25c 25 t rr reverse recovery time t j = 125c 160 ns t j = 25c 35 q rr reverse recovery charge i f = 30a v r = 400v di/dt =200a/s t j = 125c 480 nc r thjc junction to case thermal resistance 1.2 c/w 2. bottom switches 2.1 bottom coolmos? characteristics absolute maximum ratings electrical characteristics symbol characteristic test conditions min typ max unit v gs = 0v,v ds = 600v t j = 25c 250 i dss zero gate voltage drain current v gs = 0v,v ds = 600v t j = 125c 500 a r ds(on) drain C source on resistance v gs = 10v, i d = 24.5a 40 45 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 3ma 2.1 3 3.9 v i gss gate C source leakage current v gs = 20 v, v ds = 0v 100 na symbol parameter max ratings unit v dss drain - source breakdown voltage 600 v t c = 25c 49 i d continuous drain current t c = 80c 38 i dm pulsed drain current 130 a v gs gate - source voltage 20 v r dson drain - source on resistance 45 m ? p d maximum power dissipation t c = 25c 290 w i ar avalanche current (repetitive and non repetitive) 15 a e ar repetitive avalanche energy 3 e as single pulse avalanche energy 1900 mj downloaded from: http:///
APTCV50H60T3G APTCV50H60T3G C rev 1 october, 2012 www.microsemi.com 4-10 dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 7.2 c rss reverse transfer capacitance v gs = 0v ; v ds = 25v f = 1mhz 0.29 nf q g total gate charge 150 q gs gate C source charge 34 q gd gate C drain charge v gs = 10v v bus = 300v i d = 49a 51 nc t d(on) turn-on delay time 21 t r rise time 30 t d(off) turn-off delay time 100 t f fall time inductive switching (125c) v gs = 10v v bus = 400v i d = 49a r g = 4.7 ? 45 ns e on turn-on switching energy 675 e off turn-off switching energy inductive switching @ 25c v gs = 10v ; v bus = 400v i d = 49a ; r g = 4.7 ? 520 j e on turn-on switching energy 1100 e off turn-off switching energy inductive switching @ 125c v gs = 10v ; v bus = 400v i d = 49a ; r g = 4.7 ? 635 j r thjc junction to case thermal resistance 0.5 c/w 3. temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? b 25/85 t 25 = 298.15 k 3952 k ?? ? ?? ? ? ?? ? ? ?? ? ? ? t t b r r t 1 1 exp 25 85/25 25 4. package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150* t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2 3 n.m wt package weight 110 g tj=175c for trench & field stop igbt3 t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTCV50H60T3G APTCV50H60T3G C rev 1 october, 2012 www.microsemi.com 5-10 5. sp3 package outline (dimensions in mm) see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com 6. top switches curves 6.1 top trench + field stop igbt3 typical performance curves output characteristics (v ge =15v) t j =25c t j =25c t j =125c t j =150c 0 20 40 60 80 100 00.511.522.53 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =19v v ge =9v 0 20 40 60 80 100 00.511.522.533.5 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =25c t j =125c t j =150c 0 20 40 60 80 100 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff 0 0.5 1 1.5 2 2.5 3 3.5 0 2 04 06 08 01 0 0 i c (a) e (mj) v ce = 300v v ge = 15v r g = 8.2 ? t j = 150c downloaded from: http:///
APTCV50H60T3G APTCV50H60T3G C rev 1 october, 2012 www.microsemi.com 6-10 eon eoff 0 0.5 1 1.5 2 2.5 3 5 152535455565 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 50a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 25 50 75 100 125 0 100 200 300 400 500 600 700 v ce (v) i c (a) v ge =15v t j =150c r g =8.2 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) igbt 6.2 top fast diode typical performance curves t j =-55c t j =25c t j =125c 0 20 40 60 80 100 120 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v f , anode to cathode voltage (v) i f , forward current (a) forw ard current vs forw ard voltage 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse d uration downloaded from: http:///
APTCV50H60T3G APTCV50H60T3G C rev 1 october, 2012 www.microsemi.com 7-10 7. bottom switches curves 7.1 bottom coolmos? typical performance curves 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 4v 4.5v 5v 5.5v 6v 6.5v 0 40 80 120 160 200 240 280 320 360 0 5 10 15 20 25 v ds , drain to source voltage (v) i d , drain current (a) v gs =15&10v low voltage output characteristics transfert characteristics t j =-55c t j =25c t j =125c 0 20 40 60 80 100 120 140 01234567 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds (on) vs drain current v gs =10v v gs =20v 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25 1.3 0 20 40 60 80 100 120 140 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 50a 0 5 10 15 20 25 30 35 40 45 50 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature downloaded from: http:///
APTCV50H60T3G APTCV50H60T3G C rev 1 october, 2012 www.microsemi.com 8-10 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) breakdown voltage vs temperature bv dss , drain to source breakdown voltage (normalized) on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d = 50a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) v gs (th), threshold voltage (normalized) maximum safe operating area 10 ms 1 ms 100 s 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited b y r ds on single pulse t j =150c t c =25c ciss crss coss 10 100 1000 10000 100000 0 1 02 03 04 05 0 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =120v v ds =300v v ds =480v 0 2 4 6 8 10 12 0 20 40 60 80 100 120 140 160 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =50a t j =25c downloaded from: http:///
APTCV50H60T3G APTCV50H60T3G C rev 1 october, 2012 www.microsemi.com 9-10 t j =25c t j =150c 1 10 100 1000 0.30.50.70.91.11.31.5 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage delay times vs current td(on) td(off) 0 20 40 60 80 100 120 140 0 1020304050607080 i d , drain current (a) t d(on) and t d(off) (ns) v ds =400v r g =5 ? t j =125c l=100h rise and fall times vs current t r t f 0 10 20 30 40 50 60 70 0 1020304050607080 i d , drain current (a) t r and t f (ns) v ds =400v r g =5 ? t j =125c l=100h switching energy vs current e on e off 0 0.4 0.8 1.2 1.6 2 0 1020304050607080 i d , drain current (a) switching energy (mj) v ds =400v r g =5 ? t j =125c l=100h e on e off 0 0.5 1 1.5 2 2.5 0 1 02 03 04 05 0 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =400v i d =50a t j =125c l=100h hard switching zcs zvs 0 50 100 150 200 250 300 5 101520253035404550 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =400v d=50% r g =5 ? t j =125c t c =75c coolmos? comprise a new family of transi stors developed by infineon technologies ag. coolmos is a trademark of infineon technologies ag. downloaded from: http:///
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